General Description. The AO uses advanced trench technology. Product Summary. R DS ON. Top View.
|Published (Last):||23 April 2015|
|PDF File Size:||3.77 Mb|
|ePub File Size:||1.86 Mb|
|Price:||Free* [*Free Regsitration Required]|
Max p-channel. Max Units. Thermal Characteristics: n-channel and p-channel. Maximum Junction-to-Lead. Parameter Maximum Junction-to-Ambient. Maximum Junction-to-Ambient. Drain-Source Voltage. Gate-Source Voltage. Absolute Maximum Ratings T. Max n-channel. Continuous Drain Current.
Pulsed Drain Current. Power Dissipation. Junction and Storage Temperature Range. DS ON. General Description. Total Gate Charge. Input Capacitance. Diode Forward Voltage. Static Drain-Source On-Resistance. Forward Transconductance. Gate Threshold Voltage. On state drain current. Gate-Body leakage current. Drain-Source Breakdown Voltage. Zero Gate Voltage Drain Current. N-Channel Electrical Characteristics T.
Reverse Transfer Capacitance Gate resistance. Output Capacitance. Maximum Body-Diode Continuous Current. Body Diode Reverse Recovery Charge. Body Diode Reverse Recovery Time. A: The value of R. FR-4 board with 2oz. Copper, in a still air environment with T.
The value. The current rating is based on the t. B: Repetitive rating, pulse width limited by junction temperature. The R. The static characteristics in Figures 1 to 6 are obtained using These tests are performed with the device mounted on 1 in.
The SOA. P-Channel Electrical Characteristics T. Forward Transconductance Diode Forward Voltage. Total Gate Charge 4. Total Gate Charge 10V. Turn-On DelayTime. The static characteristics in Figures 1 to 6,12,14 are obtained using SOA curve provides a single pulse rating. Fig 1: On-Region Characteristics. Figure 2: Transfer Characteristics. Figure 3: On-Resistance vs. Drain Current and Gate. Figure 6: Body diode characteristics.
Figure 4: On-Resistance vs. Junction Temperature. Figure 5: On-Resistance vs. Figure 7: Gate-Charge characteristics. Figure 8: Capacitance Characteristics. Pulse Width s. Ambient Note E.
Figure 9: Maximum Forward Biased Safe. Operating Area Note E. Drain Current and. Gate Voltage. Figure 6: Body-Diode Characteristics. Figure 7: Gate-Charge Characteristics. SO-8 Package Data. SO-8 Tape and Reel Data. SO-8 Carrier Tape.
AO4606 MOSFET. Datasheet pdf. Equivalent
Complementary Enhancement Mode Field Effect Transistor
AO4604, AO4604L, AO4606